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参数资料
| 型号： | SPD220TXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 148K |
| 代理商： | SPD220TXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SPD
__ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
│
└ Voltage/Family
205 = 50V
210 = 100V
220 = 200V
230 = 300V
SPD205 thru SPD230
and
SPD205SMS thru SPD230SMS
2.0 AMPS
50 ─ 300 VOLTS
25 ns HYPERFAST RECOVERY
RECTIFIER
FEATURES:
Hyper Fast Reverse Recovery: 25ns Maximum 4/
PIV to 300 Volts
Hermetically Sealed
Low Forward Voltage Drop
Void Free Chip Construction
For High Efficiency Applications
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available
2/
Replacement for: 1N 5802, US thru 1N5806, US
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
SPD205
SPD210
SPD220
SPD230
VRRM
VRWM
VR
50
100
200
300
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TA = 25°C)
IO
2.0
Amps
Peak Surge Current
(8.3ms pulse, half sine wave superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
IFSM
50
Amps
Operating & Storage Temperature
TJ and
TSTG
-65 to +175
°
C
Thermal Resistance
Junction to Lead for Axial, L =.375"
Junction to End Tab for Surface Mount
RθJL
RθJE
38
25
°
C/W
NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
4/
IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
Axial Leaded
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0099E
DOC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPD-221 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:C to Ku Band Mixer, Detector, Modulator Applications |
| SPD22N08S2L-50 | 功能描述:MOSFET N-CH 75V 25A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPD230 | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:25 ns HYPERFAST RECOVERY RECTIFIER |
| SPD230SMS | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:2.0 AMPS 50 - 300 VOLTS 25 ns HYPERFAST RECOVERY RECTIFIER |
| SPD23N05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
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