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参数资料
| 型号： | SPD6643TXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.3 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 214K |
| 代理商： | SPD6643TXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SPD____ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package Type
__ = Axial Leaded
SM = Surface Mount Round Tab (MELF)
SMS = Surface Mount Square Tab
│
└ Device Type ( VRWM )
6638 = 125 V
6642 = 75 V
6643 = 50 V
SPD6638, SPD6642, SPD6643
SERIES
300 mA
50 - 125 VOLTS
4.5 - 6.0 nsec HYPER FAST RECOVERY
RECTIFIER
FEATURES:
Hyper Fast Reverse Recovery Time 4.5 - 6 ns Max
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Available in Axial, Subminiature Round Tab &
Subminiature Square Tab Versions
TX, TXV, and S-Level Screening Available
2/
Replacement for 1N6638, 1N6642, 1N6643
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SPD6638
SPD6642
SPD6643
VRWM
VR
125
75
50
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
IO
300
mAmps
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
IFSM
2.5
Amps
Operating & Storage Temperature
TOP and TSTG
-65 to +175
°
C
Thermal Resistance
SM and SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
RθJE
RθJL
65
220
°
C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
Axial Leaded
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0004C
DOC
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