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参数资料
| 型号： | SPD6643TXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.3 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 214K |
| 代理商： | SPD6643TXV |
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS
SYMBOL VALUE
UNIT
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C)
SPD6638 @ IF = 10mA
SPD6642 @ IF = 10mA
SPD6643 @ IF = 10mA
VF1
0.8
1.0
Vdc
SPD6638 @ IF = 200mA
SPD6642 @ IF = 100mA
SPD6643 @ IF = 100mA
VF2
1.1
1.2
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed)
IF = 100mA, TA = -55°C
VF3
1.3
Vdc
Minimum Breakdown Voltage
Ir = 100 μA
SPD6638
SPD6642
SPD6643
BVR
125
100
75
Vdc
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
SPD6638 @ VR = 20V
SPD6642 @ VR = 20V
SPD6643 @ VR = 20V
IR1
35
25
50
nA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
SPD6638 @ VR = 100V
SPD6642 @ VR = 75V
SPD6643 @ VR = 50V
IR2
500
nA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
SPD6638 @ VR = 20V
SPD6642 @ VR = 20V
SPD6643 @ VR = 20V
IR3
50
75
μA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
SPD6638 @ VR = 100V
SPD6642 @ VR = 75V
SPD6643 @ VR = 50V
IR4
100
160
μA
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
SPD6638
SPD6642
SPD6643
CJ1
2.5
5.0
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
SPD6638
SPD6642
SPD6643
CJ2
2.0
2.8
pf
Maximum Reverse Recovery Time
(IF = IR = 10 mA, IRR = 1 mA)
SPD6638
SPD6642
SPD6643
trr
4.5
5.0
6.0
nsec
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD6638, SPD6642, SPD6643
SERIES
DIMENSIONS
DIM.
MIN.
MAX.
DIM.
MIN.
MAX.
A
.056”
.080”
A
.070”
.085”
B
.130”
.180”
B
.180”
.210”
C
1.00”
1.50”
C
.022”
.028”
AXIAL
D
.018”
.022”
SMS
D
.001”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0004C
DOC
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