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参数资料
| 型号： | SPN02N60C3 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 1/12页 |
| 文件大小： | 259K |
| 代理商： | SPN02N60C3 |
2004-03-01
Page 1
SPN02N60C3
Rev. 2.1
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Extreme d
v
/d
t
rated
Ultra low effective capacitances
V
DS
@
T
jmax
R
DS(on)
I
D
650
3
V
A
0.4
SOT223
VPS05163
1
2
3
4
Type
SPN02N60C3
Package
SOT223
Ordering Code
Q67040-S4553
Marking
02N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current,
t
p
limited by
T
jmax
T
A
= 25 °C
Gate source voltage static
I
D
0.4
0.3
I
D puls
2.2
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
1.8
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
A
= 25°C
Operating and storage temperature
W
-55... +150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPN02N60C3 E6433 | 功能描述:MOSFET COOL MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPN02N60C3_05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances |
| SPN02N60C3E6433XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R |
| SPN02N60C3NT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R |
| SPN02N60C3XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 |
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