参数资料
型号: SPP04N50C3
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS™ Power Transistor
文件页数: 1/13页
文件大小: 292K
代理商: SPP04N50C3
2003-10-07
Page 1
SPP04N50C3, SPB04N50C3
SPA04N50C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
@
T
jmax
R
DS(on)
I
D
560
V
A
0.95
4.5
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
04N50C3
04N50C3
04N50C3
Type
SPP04N50C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4575
SPB04N50C3
P-TO263-3-2
Q67040-S4573
SPA04N50C3
P-TO220-3-31 Q67040-S4572
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
4.5
2.8
4.5
1)
2.8
1)
A
I
D puls
E
AS
13.5
13.5
A
I
D
=3.4A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=4.5A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
130
130
mJ
E
AR
0.4
0.4
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
4.5
4.5
A
±20
±
30
50
±20
±
30
31
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP_B
-55...+150
°C
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