参数资料
型号: SPP04N50C3
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS™ Power Transistor
文件页数: 6/13页
文件大小: 292K
代理商: SPP04N50C3
2003-10-07
Page 6
SPP04N50C3, SPB04N50C3
SPA04N50C3
Final data
5 Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 10 μs,
V
GS
0
5
10
15
V
25
V
DS
0
2
4
6
8
10
12
A
16
I
D
4V
4.5V
5V
5.5V
6V
20V
10V
7V
6.5V
8 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=150°C
parameter:
t
p
= 10 μs,
V
GS
0
5
10
15
V
25
V
DS
0
1
2
3
4
5
6
7
A
9
I
D
4V
4.5V
5V
5.5V
6V
20V
8V
7V
6.5V
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