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参数资料
| 型号： | SPP12N50C3 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 3/13页 |
| 文件大小： | 365K |
| 代理商： | SPP12N50C3 |
2004-03-29
Rev. 2.1
Page 3
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=7A
-
8
-
S
Input capacitance
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
1200
-
pF
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
5)
energy related
-
400
-
-
30
-
V
GS
=0V,
V
DS
=0V to 400V
-
45
-
Effective output capacitance,
6)
time related
C
o(tr)
-
92
-
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/10V,
I
D
=11.6A,
R
G
=6.8
-
10
-
ns
-
8
-
Turn-off delay time
Fall time
-
45
-
-
8
-
Gate Charge Characteristics
Gate to source charge
Q
gs
Q
gd
Q
g
V
DD
=400V,
I
D
=11.6A
-
5
-
nC
Gate to drain charge
-
26
-
Gate charge total
V
DD
=400V,
I
D
=11.6A,
V
GS
=0 to 10V
-
49
-
Gate plateau voltage
V
(plateau)
V
DD
=400V,
I
D
=11.6A
-
5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
6
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP12N50C3_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated |
| SPP12N50C3_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP12N50C3HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 560V 11.6A TO-220 |
| SPP12N50C3XKSA1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPP1305 | 制造商:SYNC-POWER 制造商全称:SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
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