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参数资料
| 型号： | SPP12N50C3 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 6/13页 |
| 文件大小： | 365K |
| 代理商： | SPP12N50C3 |
2004-03-29
Rev. 2.1
Page 6
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
5 Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 10 μs,
V
GS
0
5
10
15
V
25
V
DS
0
4
8
12
16
20
24
28
32
A
40
I
D
4.5V
5V
5.5V
6V
6.5V
7V
20V
10V
8V
8 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=150°C
parameter:
t
p
= 10 μs,
V
GS
0
5
10
15
V
25
V
DS
0
2
4
6
8
10
12
14
16
18
A
22
I
D
4V
4.5V
5V
5.5V
6V
20V
8V
7.5V
7V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP12N50C3_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated |
| SPP12N50C3_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP12N50C3HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 560V 11.6A TO-220 |
| SPP12N50C3XKSA1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPP1305 | 制造商:SYNC-POWER 制造商全称:SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
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