参数资料
型号: SS10P6-M3/86A
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 7 A, 60 V, SILICON, RECTIFIER DIODE, TO-277A
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN
文件页数: 1/5页
文件大小: 92K
代理商: SS10P6-M3/86A
Document Number: 89043
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Schottky Barrier Rectifier
SS10P5, SS10P6
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling diodes, DC/DC converters and polarity
protection application.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Guardring for overvoltage protection
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1) Units mounted on infinite heatsink
(2) Units mounted on 5 cm x 5 cm, 2 oz. copper pad
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
50 V, 60 V
IFSM
280 A
EAS
20 mJ
VF at IF = 10 A
0.55 V
TJ max.
150 °C
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMP Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS10P5
SS10P6
UNIT
Device marking code
S105
S106
Maximum repetitive peak reverse voltage
VRRM
50
60
V
Maximum average forward rectified current (fig. 1)
IF(AV)
10 (1)
A
7 (2)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
280
A
Non-repetitive avalanche energy at IAS = 2 A , TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料
PDF描述
SS10P5HM3/87A 7 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A
SS1P3LHE3/84A 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA
SS1P3L-E3/85A 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA
SS1P4L-E3/84A 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA
SS1P3LHE3/85A 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA
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