参数资料
型号: SS1P4L-E3/84A
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA
封装: ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件页数: 1/4页
文件大小: 101K
代理商: SS1P4L-E3/84A
New Product
SS1P3L & SS1P4L
Vishay General Semiconductor
Document Number: 88915
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Low VF High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1 A
VRRM
30 V, 40 V
IFSM
50 A
EAS
11.25 mJ
VF
0.35 V, 0.38 V
TJ max.
150 °C
DO-220AA (SMP)
eSMPTM Series
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1P3L
SS1P4L
UNIT
Device marking code
13L
14L
Maximum repetive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (Fig. 1)
TL = 140 °C
TL = 135 °C
IF(AV)
1.0
1.5
A
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
IFSM
50
A
Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C
EAS
11.25
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS1P3L
SS1P4L
UNIT
Maximum instantaneous forward voltage (1)
IF = 1.0 A
TJ = 25 °C
TJ = 125 °C
VF
0.45
0.35
0.48
0.38
V
Maximum reverse current at rated VR
(2)
TJ = 25 °C
TJ = 125 °C
IR
200
20
150
15
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
110
130
pF
相关PDF资料
PDF描述
SS1P3LHE3/85A 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA
SS2H10 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
SS32S-E3/5AT 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC
SS33S-E3/61T 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC
SS32S-E3/61T 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC
相关代理商/技术参数
参数描述
SS1P4LHE3/84A 功能描述:肖特基二极管与整流器 40 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS1P4LHE3/85A 功能描述:肖特基二极管与整流器 40 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS1P4LHM3/84A 功能描述:肖特基二极管与整流器 40volt 1.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS1P4LHM3/85A 功能描述:肖特基二极管与整流器 40volt 1.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS1P4L-M3/84A 功能描述:肖特基二极管与整流器 40volt 1.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel