参数资料
型号: SS110
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
封装: GREEN, PLASTIC, SMA, 2 PIN
文件页数: 2/2页
文件大小: 132K
代理商: SS110
Version:G11
RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115)
FIG.1 FORWARD CURRENT DERATING CUURVE
0
0.2
0.4
0.6
0.8
1
1.2
50
60
70
80
90
100
110
120
130
140
150
160
170
LEAD TEMPERATURE (
oC)
AVER
AG
E
F
O
R
W
AR
D
C
U
R
EN
T
(A
)
SS12-SS14
SS15-SS115
RESISTIVE OR
INDUCTIVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0
10
20
30
40
1
10
100
NUMBER OF CYCLES AT 60 Hz
PEAK
F
O
R
W
AR
D
SU
R
G
E
CURRE
N
T
(A
)
8.3ms Single Half
Sine-Wave
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
0.001
0.01
0.1
1
10
100
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
IN
ST
AN
T
A
N
E
O
U
S
R
EVER
SE
CURRE
NT
(m
A
)
TA=25℃
TA=75℃
TA=125℃
SS12-SS14
SS15-SS115
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10
100
1000
0.1
1
10
100
REVERSE VOLTAGE (V)
C
APAC
IT
AN
C
E
(
p
F
)
TA=25℃
f=1.0MHz
Vslg=50mV
SS12-SS14
SS15-SS16
SS19-SS115
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
IN
S
T
A
N
T
A
NE
OUS
F
O
RWA
RD
CURRE
N
T
(A
)
SS12-SS14
SS15-SS16
SS115
SS19-SS110
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
0.1
1
10
100
0.01
0.1
1
10
100
T-PULSE DURATION(s)
T
R
AN
SIEN
T
H
ER
MAL
IMPED
AN
C
E
(
/W
)
相关PDF资料
PDF描述
SS115 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
SS12 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
SS12P2LHG3/87A 12 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A
SS12P3L-G3/87A 12 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
SS12P3LHG3/87A 12 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
相关代理商/技术参数
参数描述
SS110 R2 制造商:Taiwan Semiconductor 功能描述:
SS110 R3 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 100V 1A 2-Pin SMA T/R
SS1101KSOT 制造商:SECELECTRONICS 制造商全称:SECELECTRONICS 功能描述:Unipolar Hall Switch-Low Sensitivity
SS1102C 制造商:未知厂家 制造商全称:未知厂家 功能描述:Integrated MCU with Spread-Spectrum Transceiver (SST)
SS1102LUA 制造商:SECELECTRONICS 制造商全称:SECELECTRONICS 功能描述:Unipolar Hall Switch-Low Sensitivity