参数资料
型号: SS115
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
封装: GREEN, PLASTIC, SMA, 2 PIN
文件页数: 1/2页
文件大小: 132K
代理商: SS115
CREAT BY ART
UL Recognized File # E-326243
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
High reliability grade (ACE-Q101 qualified)
SS1X
G
= Green Compound
Y
= Year
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
SS
12
SS
13
SS
14
SS
15
SS
16
SS
19
SS
110
SS
115
Unit
VRRM
20
30
40
50
60
90
100
150
V
VRMS
14
21
28
35
42
63
70
105
V
VDC
20
30
40
50
60
90
100
150
V
IF(AV)
A
mA
Cj
pF
TJ
OC
TSTG
OC
Version:G11
Note3: Mount on Cu-Pad Size 5mm × 5mm on P.C.B.
10
5
Typical Junction Capecitance (Note 2)
50
Note1: Pulse Test with PW=300u sec, 1% Duty Cycle
--
Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C.
Operating Temperature Range
Storage Temperature Range
- 65 to + 150
- 65 to + 125
- 65 to + 150
0.1
IR
Mechanical Data
Maximum Repetitive Peak Reverse Voltage
Dimensions in inches and (millimeters)
Terminal: Pure tin plated, lead free
Case: JEDEC SMA/DO-214AC Molded plastic
-
Packaging: 12 mm tape per EIA STD RS-481
2
High temperature soldering guaranteed: 260℃
/10s at terminals
SS12 - SS115
1.0AMP Surface Mount Schottky Barrier Rectifier
Marking Diagram
SMA/DO-214AC
Epitaxial construction
Features
Plastic material used carriers Underwriters
Laboratory Classigication 94V-0
30
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Weight: 0.066 gram
Type Number
Maximum Average Forward Rectified Current
Maximum Reverse Current @ Rated VR TA=25 ℃
TA=100℃
TA=125 ℃
0.4
Polarity: Indicated by cathode band
= Specific Device Code
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.0
A
Maximum Instantaneous Forward Voltage (Note 1)
@ 1.0A @ 25℃
@ 1.0A @100℃
VF
0.5
0.4
0.75
0.65
0.80
0.70
0.95
0.85
V
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
Typical Thermal Resistance (Note 3)
RθjL
RθjA
28
88
OC/W
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
相关PDF资料
PDF描述
SS12 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
SS12P2LHG3/87A 12 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A
SS12P3L-G3/87A 12 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
SS12P3LHG3/87A 12 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
SS12P3LHG3/86A 12 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
相关代理商/技术参数
参数描述
SS115 F2 制造商:SKMI/Taiwan 功能描述:Diode Schottky 150V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 150V 1A 2-Pin SMA T/R
SS1150 制造商:CHENDA 制造商全称:Chendahang Electronics Co., Ltd 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER For surface mounted applications
SS1150-L 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:1 Amp Schottky Rectifier 150 to 200 Volts
SS1150-LTP 功能描述:DIODE SCHOTTKY 150V 1A DO214AC RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)(最大):50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)(最大):1.4V @ 6A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座,接线柱安装 封装/外壳:DO-203AA,DO-4,接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879
SS1157-1032-01 制造商:Lyn-Tron Inc 功能描述: