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参数资料
| 型号： | SS12P4C-M3/86A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 93K |
| 代理商： | SS12P4C-M3/86A |
Document Number: 89141
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 13-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Schottky Barrier Rectifier
SS12P4C
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters and polarity protection
applications.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal impedance
Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free,
RoHS
compliant,
and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
(2) Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
IF(AV)
2 x 6.0 A
VRRM
40 V
IFSM
150 A
EAS
20 mJ
VF at IF = 6.0 A
0.40 V
TJ max.
125 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12P4C
UNIT
Device marking code
S124C
Maximum repetitive peak reverse voltage
VRRM
40
V
Maximum average forward rectified current (fig. 1) (1)
total device
IF(AV)
12
A
per diode
6.0
Maximum average forward rectified current (2)
total device
IF(AV)
3.5
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
EAS
20
mJ
Peak repetitive reverse current at tp = 2 s, 1 kHz,
at TJ = 25 °C per diode
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 125
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SS12P4C-M3-87A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifier |
| SS12P4S | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SMD Photovoltaic Solar Cell Protection Schottky Rectifier |
| SS12P4S-M3/86A | 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS12P4S-M3/87A | 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS12R2 | 制造商:Taiwan Semiconductor 功能描述:Schottky rectifier diode, SS12 R2 |
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