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参数资料
| 型号： | SS12P4C-M3/86A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 93K |
| 代理商： | SS12P4C-M3/86A |
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For technical questions within your region, please contact one of the following:
Document Number: 89141
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 13-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P4C
Vishay General Semiconductor
New Product
Notes
(3) Pulse test: 300 s pulse width, 1 % duty cycle
(4) Pulse test: Pulse width
40 ms
Notes
(1) Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient.
(2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance RJM - junction to mount.
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x
100 mm fin heat sink, TM measured at the terminal of cathode
band (RJM = 3 °C/W)
Free
air,
mounted
on
recommended
copper
pad
area
(RJA = 100 °C/W)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage per diode
IF = 1 A
TA = 25 °C
VF (1)
0.34
-
V
IF = 3 A
0.40
-
IF = 6 A
0.46
0.52
IF = 1 A
TA = 100 °C
0.24
-
IF = 3 A
0.31
-
IF = 6 A
0.40
0.45
Reverse current per diode
Rated VR
TA = 25 °C
IR (2)
129
500
A
TA = 100 °C
11.9
25
mA
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
400
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12P4C
UNIT
Typical thermal resistance
RJA (1)
100
°C/W
RJM (2)
3
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS12P4C-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
SS12P4C-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
SS12P4CHM3/86A (1)
0.10
86A
1500
7" diameter plastic tape and reel
SS12P4CHM3/87A (1)
0.10
87A
6500
13" diameter plastic tape and reel
10
12
14
8
6
4
2
0
25
50
75
125
150
DC
F
o
rw
ard
C
u
rrent
(A)
Ambient Temperature (°C)
100
T
M = 100 °C
(1)
T
A = 25 °C
(2)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SS12P4C-M3-87A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifier |
| SS12P4S | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SMD Photovoltaic Solar Cell Protection Schottky Rectifier |
| SS12P4S-M3/86A | 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS12P4S-M3/87A | 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS12R2 | 制造商:Taiwan Semiconductor 功能描述:Schottky rectifier diode, SS12 R2 |
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