参数资料
型号: SS1H10-E3/63T
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
封装: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件页数: 2/4页
文件大小: 91K
代理商: SS1H10-E3/63T
www.vishay.com
2
Document Number 88747
07-Jul-06
Vishay General Semiconductor
SS1H9 & SS1H10
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS1H9
SS1H10
UNIT
Maximum instantaneous forward voltage at: (1)
IF = 1.0 A,
IF = 2.0 A,
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF
0.77
0.62
0.86
0.70
V
Maximum DC reverse current at rated DC
blocking voltage (1)
Tj = 25 °C
Tj = 125 °C
IR
1.0
0.5
A
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1H9
SS1H10
UNIT
Maximum thermal resistance (1)
RθJA
RθJL
88
30
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS1H10-E3/61T
0.064
61T
1800
7" Diameter Plastic Tape & Reel
SS1H10-E3/5AT
0.064
5AT
7500
13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
0
0.2
0.4
0.6
0.8
1.0
1.2
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
25
50
75
100
125
150
175
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
20
30
40
50
60
110
100
Number of Cycles at 60 Hz
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
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