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参数资料
| 型号： | SS26-E3/5T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 93K |
| 代理商： | SS26-E3/5T |
Vishay General Semiconductor
SS22 thru SS26
Document Number 88748
07-Jul-06
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AA (SMB)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
2.0 A
VRRM
20 V to 60 V
IFSM
75 A
VF
0.50 V, 0.70 V
Tj max.
125 °C, 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS22
SS23
SS24
SS25
SS26
UNIT
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Max. average forward rectified current at TL (see Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Ω
VC
8.0
KV
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SS26-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifier |
| SS26H | 制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| SS26HE3/2CT | 功能描述:肖特基二极管与整流器 60 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS26HE3/52T | 功能描述:肖特基二极管与整流器 60 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS26HE3/55T | 功能描述:肖特基二极管与整流器 60 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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