参数资料
型号: SS29-HE3/5BT
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AA
封装: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件页数: 2/4页
文件大小: 0K
代理商: SS29-HE3/5BT
www.vishay.com
2
Document Number 88749
07-Jul-06
Vishay General Semiconductor
SS29 & SS210
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS29
SS210
UNIT
Maximum instantaneous forward
voltage at: (1)
IF = 0.1 A,
IF = 1.0 A,
IF = 3.0 A,
IF = 1.5 A,
IF = 3.0 A,
TA = 25 °C
TA = 100 °C
VF
0.43
0.75
0.95
0.71
0.85
V
Maximum DC reverse current
at rated VR
(1)
TA = 25 °C
TA = 100 °C
IR
30
5
A
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS29
SS210
UNIT
Maximum thermal resistance (1)
RθJA
RθJL
85
25
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS210-E3/52T
0.096
52T
750
7" Diameter Plastic Tape & Reel
SS210-E3/5BT
0.096
5BT
3200
13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
0
0.5
1
1.5
2
0
25
50
75
100
125
150
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Lead Temperature (°C)
Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Figure 2. Forward Power Loss Characteristics
0
0.5
1.0
1.5
2.0
2.5
00.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
D = tp/T
tp
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
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