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参数资料
| 型号： | SS34-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | LEAD FREE, PLASTIC, SMC, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 382K |
| 代理商： | SS34-E3 |
SS32 thru SS36
Vishay General Semiconductor
Document Number: 88751
Revision: 23-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
100 A
EAS
20 mJ
VF
0.5 V, 0.75 V
TJ max.
125 °C, 150 °C
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
SS34
SS35
SS36
UNIT
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current at TL (Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Voltage rate of change (rated VR)
dv/dt
10 000
V/s
Operating junction temperature range
TJ
- 55 to + 125
- 55 to + 150
°C
Storage temperature range
TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SS34-HE3 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS36 | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H10-E3/57T | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H9-E3/57T | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H9-E3/9AT | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS34-E3/1 | 制造商:Vishay Intertechnologies 功能描述: |
| SS34-E3/1T | 功能描述:肖特基二极管与整流器 40 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS34-E3/51T | 功能描述:肖特基二极管与整流器 40 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS34-E3/57T | 功能描述:肖特基二极管与整流器 3.0 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS34-E3/57T | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER 3A 40V DO-214AB |
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