参数资料
型号: SS34-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB
封装: LEAD FREE, PLASTIC, SMC, 2 PIN
文件页数: 2/4页
文件大小: 382K
代理商: SS34-E3
SS32 thru SS36
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88751
Revision: 23-Jan-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) P.C.B. mounted 0.55 x 0.55" (14 x 14 mm) copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS32
SS33
SS34
SS35
SS36
UNIT
Maximum instantaneous
forward voltage (1)
3.0 A
VF
0.5
0.75
V
Maximum DC reverse current
at rated DC blocking voltage (1)
TA = 25 °C
TA = 100 °C
IR
0.5
mA
20
10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
SS34
SS35
SS36
UNIT
Typical thermal resistance (1)
RθJA
RθJL
55
17
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS34-E3/57T
0.235
57T
850
7" diameter plastic tape and reel
SS34-E3/9AT
0.235
9AT
3500
13" diameter plastic tape and reel
SS34HE3/57T (1)
0.235
57T
850
7" diameter plastic tape and reel
SS34HE3/9AT (1)
0.235
9AT
3500
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
50
170
70
90
110
130
150
0
1.5
2.5
3.5
Resistive or Inductive Load
SS32 - SS34
SS35 & SS36
Ambient Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
P.C.B. Mounted on
0.55 x 0.55" (14 x 14 mm)
Copper Pad Areas
0.5
1.0
2.0
3.0
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
At Rated T
L
8.3 ms Single Half Sine-Wave
相关PDF资料
PDF描述
SS34-HE3 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB
SS36 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB
SS3H10-E3/57T 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB
SS3H9-E3/57T 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB
SS3H9-E3/9AT 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB
相关代理商/技术参数
参数描述
SS34-E3/1 制造商:Vishay Intertechnologies 功能描述:
SS34-E3/1T 功能描述:肖特基二极管与整流器 40 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS34-E3/51T 功能描述:肖特基二极管与整流器 40 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS34-E3/57T 功能描述:肖特基二极管与整流器 3.0 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS34-E3/57T 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER 3A 40V DO-214AB