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参数资料
| 型号： | SS3P3HE3/84A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 80K |
| 代理商： | SS3P3HE3/84A |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88944
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P3
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. RJL is measured
at the terminal of cathode band. RJC is measured at the top center of the body
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous forward voltage
IF = 3 A
TJ = 25 °C
VF (1)
0.52
0.58
V
IF = 3 A
TJ = 125 °C
0.43
0.48
Maximum reverse current at rated VR
TJ = 25 °C
IR (2)
-
200
μA
TJ = 125 °C
9.0
20
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
130
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS3P3
UNIT
Typical thermal resistance (1)
RJA (1)
95
°C/W
RJL (1)
15
RJC (1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS3P3-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SS3P3-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
SS3P3HM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
SS3P3HM3/85A (1)
0.024
85A
10 000
13" diameter plastic tape and reel
3.0
2.5
2.0
1.5
1.0
0.5
0
80
90
100
110
120
130
140
150
Lead Temperature (°C)
T
L Measured
at the Cathode Band Terminal
A
v
er
age
F
o
rw
ard
Rectified
Current
(A)
50
40
30
20
10
0
1
10
100
Number of Cycles at 50 Hz
P
e
ak
F
o
rw
ard
Surge
Current
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| SS3P3HE3/85A | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS3P3-E3/85A | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS3P3HM3/84A | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS3P4-E3/85A | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS3P4-HE3/85A | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS3P3HM3/84A | 功能描述:肖特基二极管与整流器 30volt 3.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS3P3HM3/85A | 功能描述:肖特基二极管与整流器 30volt 3.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS3P3HM3-84A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS3P3HM3-85A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS3P3L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
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