- 您现在的位置：买卖IC网 > PDF目录21852 > SSN1N45BTA (Fairchild Semiconductor)MOSFET N-CH 450V 500MA TO-92 PDF资料下载
参数资料
| 型号： | SSN1N45BTA |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 450V 500MA TO-92 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 450V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.25 欧姆 @ 250mA，10V |
| Id 时的 Vgs(th)（最大）： | 3.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 240pF @ 25V |
| 功率 - 最大： | 900mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 剪切带 (CT) |
| 其它名称： | SSN1N45BTACT |
November 2013
SSN1N45B
N-Channel B- FET
450 V, 0.5 A, 4.25 ?
Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for electronic ballasts
based on half bridge configuration.
?
?
?
?
?
?
0.5 A, 450 V, R DS(on) = 4.25 ? @ V GS = 10 V
Low G ate C harge (typical 6.5 nC)
Low Crss ( t ypical 6.5 pF)
100% A valanche T ested
Improved dv/dt C apability
Gate-Source Voltage ± 50V G uaranteed
D
G
D
S
TO-92
G
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
SSN1N45B TA
450
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
0.5
0.32
A
A
I DM
Drain Current
- Pulsed
(Note 1)
4.0
A
V GSS
Gate-Source Voltage
± 50
V
E AS
I AR
E AR
dv/dt
P D
T J , T stg
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C)
Power Dissipation (T L = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 " from C ase for 5 S econds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
108
0.5
0.25
5.5
0.9
2.5
0.02
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
SSN1N45BTA
Unit
R θ JL
R θ JA
Thermal Resistance, Junction-to-Lead , Max.
Thermal Resistance, Junction-to-Ambient , Max.
(Note 5 a)
(Note 5 b)
50
140
°C / W
°C / W
?2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C 0
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| XPEWHT-01-0000-00ED2 | LED OUTDOOR WHT 4500K XLAMP SMD |
| OPB892N51Z | SENS OPTO SLOT 3.18MM TRANS C-MT |
| XTEHVW-Q0-0000-00000LDE4 | LED XT-E HIGH VOLTAGE WHITE |
| XTEHVW-Q0-0000-00000L9E8 | LED XT-E HIGH VOLTAGE WHITE |
| OPB892L51Z | SENS OPTO SLOT 3.18MM TRANS THRU |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SSN-2025A | 制造商:MINI 制造商全称:Mini-Circuits 功能描述:Frequency Synthesizer |
| SSN-2025A+ | 制造商:MINI 制造商全称:Mini-Circuits 功能描述:Frequency Synthesizer |
| SSN-2222A-119 | 制造商:MINI 制造商全称:Mini-Circuits 功能描述:Frequency Synthesizer |
| SSN-2222A-119+ | 制造商:MINI 制造商全称:Mini-Circuits 功能描述:Frequency Synthesizer |
| SSN-2362A | 制造商:MINI 制造商全称:Mini-Circuits 功能描述:Frequency Synthesizer |
发布紧急采购，3分钟左右您将得到回复。