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参数资料
| 型号： | SST25LF020A-33-4C-SAE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 12/27页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 2MB 33HZ SPI 8SOIC |
| 标准包装： | 3,300 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 33MHz |
| 接口： | SPI 串行 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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2 Mbit SPI Serial Flash
A Microchip Technology Company
SST25LF020A
Not Recommended for New Designs
Auto Address Increment (AAI) Program
The AAI program instruction allows multiple bytes of data to be programmed without re-issuing the
next sequential address location. This feature decreases total programming time when the entire mem-
ory array is to be programmed. An AAI program instruction pointing to a protected memory area will be
ignored. The selected address range must be in the erased state (FFH) when initiating an AAI program
instruction.
Prior to any write operation, the Write-Enable (WREN) instruction must be executed. The AAI program
instruction is initiated by executing an 8-bit command, AFH, followed by address bits [A 23 -A 0 ]. Follow-
ing the addresses, the data is input sequentially from MSB (bit 7) to LSB (bit 0). CE# must be driven
high before the AAI program instruction is executed. The user must poll the BUSY bit in the software
status register or wait T BP for the completion of each internal self-timed Byte-Program cycle. Once the
device completes programming byte, the next sequential address may be program, enter the 8-bit
command, AFH, followed by the data to be programmed. When the last desired byte had been pro-
grammed, execute the Write-Disable (WRDI) instruction, 04H, to terminate AAI. After execution of the
WRDI command, the user must poll the Status register to ensure the device completes programming.
See Figure 8 for AAI programming sequence.
There is no wrap mode during AAI programming; once the highest unprotected memory address is
reached, the device will exit AAI operation and reset the Write-Enable-Latch bit (WEL = 0).
CE#
T B P
T B P
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32 33 34 35 36 37 38 39
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0 1
SCK
MODE 0
SI
AF
A[23:16] A[15:8]
A[7:0]
Data Byte 1
AF
Data Byte 2
T BP
CE#
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SI
AF
Last Data Byte
04
05
SO
Write Disable (WRDI)
Instruction to terminate
AAI Operation
Read Status Register (RDSR)
Instruction to verify end of
AAI Operation
D OUT
1242 F07.0
Figure 8: Auto Address Increment (AAI) Program Sequence
?2011 Silicon Storage Technology, Inc.
12
DS25080A
11/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25LF020A-33-4E-QAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 Mbit SPI Serial Flash |
| SST25LF020A-33-4E-S2AE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit SPI Serial Flash |
| SST25LF020A-33-4E-SA | 功能描述:闪存 2 Mbit 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25LF020A-33-4E-SAE | 功能描述:闪存 2 Mbit 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25LF020A-33-4I-QAE | 功能描述:闪存 2Mbit 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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