- 您现在的位置：买卖IC网 > PDF目录4252 > SST25LF020A-33-4I-SAE-T (Microchip Technology)IC FLASH SER 2MB 33HZ SPI 8SOIC PDF资料下载
参数资料
| 型号： | SST25LF020A-33-4I-SAE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 13/27页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 2MB 33HZ SPI 8SOIC |
| 标准包装： | 2,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 33MHz |
| 接口： | SPI 串行 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页
2 Mbit SPI Serial Flash
A Microchip Technology Company
SST25LF020A
Not Recommended for New Designs
Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the any
command sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-
lowed by address bits [A 23 -A 0 ]. Address bits [A MS -A 12 ] (A MS = Most Significant address) are used to
determine the sector address (SA X ), remaining address bits can be V IL or V IH. CE# must be driven high
before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T SE for the completion of the internal self-timed Sector-Erase cycle. See Figure 9 for the Sector-Erase
sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
20
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
1242 F08.0
Figure 9: Sector-Erase Sequence
Block-Erase
The Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-
mand sequence. The Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed
by address bits [A 23 -A 0 ]. Address bits [A MS -A 15 ] (A MS = Most significant address) are used to deter-
mine block address (BA X ), remaining address bits can be V IL or V IH . CE# must be driven high before the
instruction is executed. The user may poll the Busy bit in the software status register or wait T BE for the com-
pletion of the internal self-timed Block-Erase cycle. See Figure 10 for the Block-Erase sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
52
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
1242 F09.0
Figure 10: Block-Erase Sequence
?2011 Silicon Storage Technology, Inc.
13
DS25080A
11/11
相关PDF资料 |
PDF描述 |
|---|---|
| XC6SLX100T-N3CSG484C | IC FPGA SPARTAN-6 484CSBGA |
| SST25VF020-20-4I-SAE-T | IC FLASH SER 2MB 20MHZ SPI 8SOIC |
| XC6SLX75-3FG676I | IC FPGA SPARTAN 6 676FGGBGA |
| XC6SLX100T-2FGG484C | IC FPGA SPARTAN 6 101K 484FGGBGA |
| XC6SLX100T-2CSG484C | IC FPGA SPARTAN 6 101K 484CSGBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25LF040A | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit SPI Serial Flash |
| SST25LF040A-33-4C-QAE | 功能描述:闪存 4Mbit 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25LF040A-33-4C-S2AE | 功能描述:闪存 4Mbit 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25LF040A-33-4C-SAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit SPI Serial Flash |
| SST25LF040A-33-4E-QAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit SPI Serial Flash |
发布紧急采购，3分钟左右您将得到回复。