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参数资料
| 型号： | SST25VF020-20-4C-SAE |
| 厂商： | Microchip Technology |
| 文件页数： | 13/27页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 2MBIT 20NS 8SOIC |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 100 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
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2 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF020
Not Recommended for New Designs
Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the any
command sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-
lowed by address bits [A 23 -A 0 ]. Address bits [A MS -A 12 ] (A MS = Most Significant address) are used to
determine the sector address (SA X ), remaining address bits can be V IL or V IH. CE# must be driven high
before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T SE for the completion of the internal self-timed Sector-Erase cycle. See Figure 8 for the Sector-Erase
sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
20
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
1231 F07.1
Figure 8: Sector-Erase Sequence
Block-Erase
The Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-
mand sequence. The Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed
by address bits [A 23 -A 0 ]. Address bits [A MS -A 15 ] (A MS = Most significant address) are used to deter-
mine block address (BA X ), remaining address bits can be V IL or V IH . CE# must be driven high before the
instruction is executed. The user may poll the Busy bit in the software status register or wait T BE for the com-
pletion of the internal self-timed Block-Erase cycle. See Figure 9 for the Block-Erase sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
MODE 0
SI
52
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
1231 F08.1
Figure 9: Block-Erase Sequence
?2011 Silicon Storage Technology, Inc.
13
DS25078A
11/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF020-20-4C-SAE-T | 功能描述:闪存 2M (256Kx8) 20MHz 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020-20-4E-QA | 功能描述:闪存 256K X 8 14 us RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020-20-4E-QAE | 功能描述:闪存 256K X 8 14 us RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020-20-4E-S2AE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit SPI Serial Flash |
| SST25VF020-20-4E-SA | 功能描述:闪存 256K X 8 14 us RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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