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参数资料
| 型号： | SST38VF6404-90-5I-B3KE |
| 厂商： | Microchip Technology |
| 文件页数： | 11/64页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 64MBIT 90NS 48TFBGA |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 480 |
| 系列： | SST38 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 64M（4M x 16） |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA |
| 包装： | 托盘 |
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64 Mbit (x16) Advanced Multi-Purpose Flash Plus
A Microchip Technology Company
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
If the Write-to-Buffer or Program Buffer-to-Flash operation aborts, then DQ 1 = 1 and the device enters
Write-Buffer-Abort mode. To execute another operation, a Write-to-Buffer Abort-Reset command must
be issued to clear DQ 1 and return the device to standard read mode.
After the Write-to-Buffer and Program Buffer-to-Flash commands are successfully issued, the pro-
gramming operation can be monitored using Data# Polling, Toggle Bits, and RY/BY#.
Sector/Block-Erase Operations
The Sector-Erase and Block-Erase operations allow the system to erase the device on a sector-by-
sector, or block-by-block, basis. The SST38VF6401/6402/6403/6404 offer both Sector-Erase and Block-
Erase modes.
The Sector-Erase architecture is based on a sector size of 4 KWords. The Sector-Erase command can
erase any 4 KWord sector (S0 - S1023).
The Block-Erase architecture is based on block size of 32 KWords. In SST38VF6401 and
SST38VF6402 devices, the Block-Erase command can erase any 32KWord Block (B0-B127). For the
non-uniform boot block devices, SST38VF6403 and SST38VF6404, the Block-Erase command can
erase any 32 KWord block except the block that contains the boot area. In the boot area, Block-Erase
behaves like Sector-Erase, and only erases a 4KWord sector. For the SST38VF6403 device, a Block-
Erase executed on the Boot Block (B0), will result in the device erasing a 4KWord sector in B0 located
at A 21 -A 12 . For the SST38VF6404 device, a Block-Erase executed on the Boot Block (B127), will result
in the device erasing a 4KWord sector in B127 located at A 21 -A 12 .
The Sector-Erase operation is initiated by executing a six-byte command sequence with Sector-Erase
command (50H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated
by executing a six-byte command sequence with Block-Erase command (30H) and block address (BA)
in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse,
while the command (50H or 30H) is latched on the rising edge of the sixth WE# pulse. The internal
Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined
using either Data# Polling or Toggle Bit methods. The RY/BY# pin can also be used to monitor the
erase operation. For more information, see Figures 14 and 15 for timing waveforms and Figure 29 for
the flowchart.
Any commands, other than Erase-Suspend, issued during the Sector- or Block-Erase operation are
ignored. A ny attempt to Sector- or Block-Erase memory inside a block protected by Volatile Block Pro-
tection, Non-Volatile Block Protection, or WP# (low) will be ignored. During the command sequence,
WP# should be statically held high or low.
Erase-Suspend/Erase-Resume Commands
The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing
data to be read or programmed into any sector or block that is not engaged in an Erase operation. The
operation is executed with a one-byte command sequence with Erase-Suspend command (B0H). The
device automatically enters read mode within 20 μs (max) after the Erase-Suspend command had
been issued. Valid data can be read, using a Read or Page Read operation, from any sector or block
that is not being erased. Reading at an address location within Erase-Suspended sectors or blocks will
output DQ 2 toggling and DQ 6 at ‘1’. While in Erase-Suspend, a Word-Program or Write-Buffer Pro-
gramming operation is allowed anywhere except the sector or block selected for Erase-Suspend.
?2011 Silicon Storage Technology, Inc.
11
DS-25015A
04/11
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相关代理商/技术参数 |
参数描述 |
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| SST38VF6404-90-5I-EKE | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6404B | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64 Mbit (x16) Advanced Multi-Purpose Flash Plus |
| SST38VF6404B-70-5I-B3KE | 功能描述:闪存 2.7- 3.6V 64Mbit pm Parallel Advance MPF RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6404B-70-5I-B3KE-T | 功能描述:闪存 2.7- 3.6V 64Mbit pm Parallel Advance MPF RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6404B-70-5I-CD | 制造商:Microchip Technology Inc 功能描述:2.7 TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF - Trays 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 70NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7 - 3.6V 64Mbit pm Parallel Advance MPF |
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