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参数资料
| 型号： | SST39WF1602-70-4I-B3KE |
| 厂商： | Microchip Technology |
| 文件页数： | 7/34页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 16MBIT 70NS 48TFBGA |
| 标准包装： | 480 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M (1M x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA |
| 包装： | 托盘 |
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16 Mbit Multi-Purpose Flash Plus
A Microchip Technology Company
SST39WF1601 / SST39WF1602
Data Sheet
for timing waveforms and Figure 24 for the flowchart. Any commands issued during the Sector- or
Block-Erase operation are ignored. When WP# is low, any attempt to Sector- (Block-) Erase the pro-
tected block will be ignored. During the command sequence, WP# should be statically held high or low.
Erase-Suspend/Erase-Resume Commands
The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing
data to be read from any memory location, or program data into any sector/block that is not suspended
for an Erase operation. The operation is executed by issuing one byte command sequence with Erase-
Suspend command (B0H). The device automatically enters read mode typically within 20 μs after the
Erase-Suspend command had been issued. Valid data can be read from any sector or block that is not
suspended from an Erase operation. Reading at address location within erase-suspended sectors/
blocks will output DQ 2 toggling and DQ 6 at “1”. While in Erase-Suspend mode, a Word-Program oper-
ation is allowed except for the sector or block selected for Erase-Suspend.
To resume Sector-Erase or Block-Erase operation which has been suspended the system must issue
Erase Resume command. The operation is executed by issuing one byte command sequence with
Erase Resume command (30H) at any address in the last Byte sequence.
Chip-Erase Operation
The SST39WF1601/1602 provide a Chip-Erase operation, which allows the user to erase the entire
memory array to the “1” state. This is useful when the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a six-byte command sequence with Chip-Erase
command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the ris-
ing edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid
read is Toggle Bit or Data# Polling. See Table 6 for the command sequence, Figure 10 for timing dia-
gram, and Figure 24 for the flowchart. Any commands issued during the Chip-Erase operation are
ignored. When WP# is low, any attempt to Chip-Erase will be ignored. During the command sequence,
WP# should be statically held high or low.
Write Operation Status Detection
The SST39WF1601/1602 provide two software means to detect the completion of a Write (Program or
Erase) cycle, in order to optimize the system write cycle time. The software detection includes two sta-
tus bits: Data# Polling (DQ 7 ) and Toggle Bit (DQ 6 ). The End-of-Write detection mode is enabled after
the rising edge of WE#, which initiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a
Data# Polling or Toggle Bit read may be simultaneous with the completion of the write cycle. If this
occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with
either DQ 7 or DQ 6 . In order to prevent spurious rejection, if an erroneous result occurs, the software
routine should include a loop to read the accessed location an additional two (2) times. If both reads
are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
?2011 Silicon Storage Technology, Inc.
7
DS-25014A
04/11
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相关代理商/技术参数 |
参数描述 |
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| SST39WF1602-70-4I-B3KE-T | 功能描述:闪存 1.65V to 1.95V 16Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF1602-70-4I-MAQE | 功能描述:闪存 1.65V to 1.95V 16mb Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF1602-70-4I-MAQE-T | 功能描述:闪存 1.65V to 1.95V 16Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF1602-70-4I-MBQE | 功能描述:闪存 16M (1Mx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF1602-90-4C-B3KE | 功能描述:闪存 1.65V to 1.95V 16mb Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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