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参数资料
| 型号： | ST180C16C1LPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 660 A, 1600 V, SCR, TO-200AB |
| 封装： | LEAD FREE, APUK-2 |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 代理商： | ST180C16C1LPBF |
Document Number: 94396
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 11-Aug-08
3
ST180CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 350 A
Vishay High Power Products
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
TJ = TJ maximum, tp ≤ 5 ms
10
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
3.0
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5.0
DC gate current required to trigger
IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
180
-
mA
TJ = 25 °C
90
150
TJ = 125 °C
40
-
DC gate voltage required to trigger
VGT
TJ = - 40 °C
2.9
-
V
TJ = 25 °C
1.8
3.0
TJ = 125 °C
1.2
-
DC gate current not to trigger
IGD
TJ = TJ maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
10
mA
DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.17
K/W
DC operation double side cooled
0.08
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
4900
(500)
N
(kg)
Approximate weight
50
g
Case style
See dimensions - link at the end of datasheet
TO-200AB (A-PUK)
ΔR
thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.011
TJ = TJ maximum
K/W
120°
0.018
0.019
90°
0.024
0.026
60°
0.035
0.036
0.037
30°
0.060
0.061
相关PDF资料 |
PDF描述 |
|---|---|
| ST180C16C1PBF | 660 A, 1600 V, SCR, TO-200AB |
| ST180C16C2LPBF | 660 A, 1600 V, SCR, TO-200AB |
| ST180C16C2PBF | 660 A, 1600 V, SCR, TO-200AB |
| ST180C16C3LPBF | 660 A, 1600 V, SCR, TO-200AB |
| ST180C16C3PBF | 660 A, 1600 V, SCR, TO-200AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST180C16C1PBF | 制造商:Vishay Intertechnologies 功能描述: |
| ST180C16C2 | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST180C16C2L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST180C16C3 | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST180C16C3L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
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