参数资料
型号: ST72324BLK2BA/XXX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP32
封装: 0.400 INCH, PLASTIC, SDIP-32
文件页数: 41/151页
文件大小: 1209K
代理商: ST72324BLK2BA/XXX
ST72F324L, ST72324BL
135/151
10-BIT ADC CHARACTERISTICS (Cont’d)
12.12.3 ADC Accuracy
Conditions: VDD=3V
1)
Notes:
1. ADC Accuracy vs. Negative Injection Current: Injecting negative current may reduce the accuracy of the conversion
being performed on another analog input. The effect of negative injection current on robust pins is specified in Section
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 12.8 does not affect the ADC
accuracy.
2. Data based on characterization results, monitored in production to guarantee 99.73% within ± max value from -40°C
to 85°C ( ± 3
σ distribution limits).
Figure 81. ADC Accuracy Characteristics
Symbol
Parameter
Conditions
Flash Devices
ROM Devices
Unit
Typ
Max2)
Typ
Max
|ET|
Total unadjusted error 1)
46
2.6
4
LSB
|EO|
Offset error 1)
35
1.3
2.6
|EG|
Gain Error 1)
0.5
4.5
1
2.8
|ED|
Differential linearity error 1)
CPU in run mode
@ fADC 1 MHz.
1.5
4.5
1.6
3.5
|EL|
Integral linearity error 1)
CPU in run mode
@ fADC 1 MHz.
1.5
4.5
1.7
2.5
EO
EG
1LSBIDEAL
1LSB
IDEAL
V
AREF
V
SSA
1024
--------------------------------------------
=
Vin (LSBIDEAL)
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
Digital Result ADCDR
1023
1022
1021
5
4
3
2
1
0
7
6
1
2345
67
1021 1022 1023 1024
(1)
(2)
ET
ED
EL
(3)
VAREF
VSSA
1
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