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| 型号： | ST7FLITEUS5M6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDSO8 |
| 封装： | 0.150 INCH, LEAD FREE, PLASTIC, SOP-8 |
| 文件页数： | 85/108页 |
| 文件大小： | 1957K |
| 代理商： | ST7FLITEUS5M6 |
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12.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
12.7.1
Functional
EMS
(Electro
Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
■ ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
■ FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to VDD and VSS through
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operations to be re-
sumed. The test results are given in the table be-
low based on the EMS levels and classes defined
in application note AN1709.
12.7.1.1 Designing hardened software to avoid
noise problems
EMC characterization and optimization are per-
formed at component level with a typical applica-
tion environment and simplified MCU software. It
should be noted that good EMC performance is
highly dependent on the user application and the
software in particular.
Therefore it is recommended that the user applies
EMC software optimization and prequalification
tests in relation with the EMC level requested for
his application.
Software recommendations:
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) can be repro-
duced by manually forcing a low state on the RE-
SET pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be ap-
plied directly on the device, over the range of
specification values. When unexpected behaviour
is detected, the software can be hardened to pre-
vent unrecoverable errors occurring (see applica-
tion note AN1015).
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to induce a
functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz,
SO8 package,
conforms to IEC 1000-4-2
3B
VFFTB
Fast transient voltage burst limits to be applied
through 100pF on VDD and VDD pins to induce a func-
tional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz,
SO8 package,
conforms to IEC 1000-4-4
4B
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ST7FLITEUS5M6TR | 功能描述:8位微控制器 -MCU ST7ULTRALITE 8B MCU SINGLE Vltg FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| ST7FLITEUS5U3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-bit MCU with single voltage Flash memory, ADC, timers |
| ST7FLITEUS5U3TR | 功能描述:8位微控制器 -MCU 8 BITS MICROCONTR RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| ST7FLITEUS5U6 | 制造商:STMicroelectronics 功能描述:8 BITS MICROCONTR - Bulk |
| ST7FLITEUS5U6/TR | 功能描述:MCU 8BIT 1KB FLASH 128KB 8-DFN RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:ST7 标准包装:96 系列:PIC® 16F 核心处理器:PIC 芯体尺寸:8-位 速度:20MHz 连通性:I²C，SPI 外围设备:欠压检测/复位，POR，PWM，WDT 输入/输出数:11 程序存储器容量:3.5KB（2K x 14） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:128 x 8 电压 - 电源 (Vcc/Vdd):2.3 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 包装:管件 |
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