参数资料
型号: ST93C06C
厂商: 意法半导体
英文描述: 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM
中文描述: 256位16 × 16或32 × 8 MICROWIRE的串行EEPROM的
文件页数: 13/15页
文件大小: 118K
代理商: ST93C06C
AI00822D
11 0
An A0
Qn
Q0
DATA OUT
D
S
Q
READ
S
WRITE
ADDR
OP
CODE
10
An
DATA IN
D
Q
Dn
D0
X
BUSY
READY
S
ERASE
WRITE
ENABLE
1
0
Xn X0
D
OP
CODE
1
01
S
ERASE
WRITE
DISABLE
1
0
Xn X0
D
OP
CODE
00
0
CHECK
STATUS
XX
A0
1X
ADDR
OP
CODE
Figure 6. READ, WRITE, EWEN, EWDS Sequences
If the ST93C06 is still performing the erase cycle,
the Busy signal (Q = 0) will be returned if S is driven
high, and the ST93C06 will ignore any data on the
bus. When the erase cycle is completed, the Ready
signal (Q = 1) will indicate (if S is driven high) that
the ST93C06 is ready to receive a new instruction.
Write
The Write instruction (WRITE) is followed by the
address and the 8 or 16 data bits to be written. Data
input is sampled on the Low to High transition of
the clock. After the last data bit has been sampled,
Chip Select (S) must be brought Low before the
next rising edge of the clock (C) in order to start the
self-timed programming cycle. If the ST93C06 is
still performing the write cycle, the Busy signal (Q
= 0) will be returned if S is driven high, and the
ST93C06 will ignore any data on the bus. When the
write cycle is completed, the Ready signal (Q = 1)
will indicate (if S is driven high) that the ST93C06
is ready to receive a new instruction. Programming
is internally self-timed (the external clock signal on
C input may be disconnected or left running after
the start of a programming cycle) and does not
require an Erase instruction prior to the Write in-
struction (The Write instruction includes an auto-
matic erase cycle before programing data).
Notes: 1. An: n = 3 for x16 org. and 4 for x8 org.
2. Xn: n = 3 for x16 org. and 4 for x8 org.
7/15
ST93C06, ST93C06C
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