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参数资料
| 型号： | ST93C47AB3TR |
| 厂商： | 意法半导体 |
| 英文描述： | 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| 中文描述： | 每1000 64 x 16或128 × 8 MICROWIRE的串行EEPROM的 |
| 文件页数： | 3/13页 |
| 文件大小： | 111K |
| 代理商： | ST93C47AB3TR |
Input Rise and Fall Times
≤
20ns
Input Pulse Voltages
0.4V to 2.4V
Input Timing Reference Voltages
1V to 2.0V
Output Timing Reference Voltages
0.8V to 2.0V
AC MEASUREMENT CONDITIONS
Note that Output Hi-Z is defined as the point where data
is no longer driven.
AI00815
2.4V
0.4V
2.0V
0.8V
2V
1V
INPUT
OUTPUT
Figure 3. ACTesting InputOutput Waveforms
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Note:
1. Sampled only, not 100% tested.
Table 3. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Parameter
TestCondition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
2.5
μ
A
I
LO
Output LeakageCurrent
0V
≤
V
OUT
≤
V
CC
,
Q inHi-Z
±
2.5
μ
A
I
CC
Supply Current (TTL Inputs)
S = V
IH
, f = 1 MHz
3
mA
Supply Current (CMOS Inputs)
S = V
IH
, f = 1 MHz
2
mA
I
CC1
Supply Current (Standby)
S = V
SS
, C = V
SS
,
ORG = V
SS
or V
CC
50
μ
A
V
IL
Input Low Voltage (D, C, S)
V
CC
= 5V
±
10%
–0.3
0.8
V
3V
≤
V
CC
≤
4.5V
–0.3
0.2 V
CC
V
V
IH
Input High Voltage (D, C, S)
V
CC
= 5V
±
10%
2
V
CC
+ 1
V
3V
≤
V
CC
≤
4.5V
0.8 V
CC
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
I
OL
= 10
μ
A
0.2
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
I
OH
= –10
μ
A
V
CC
–0.2
V
Table 4. DC Characteristics
(T
A
= 0 to70
°
C or –40 to 85
°
C; V
CC
= 4.5V to 5.5Vor 3V to 5.5V)
3/13
ST93C46A/46C/46T, ST93C47C/47T
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| ST93C47CM6013TR | MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes |
| ST93C47T | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.7A; On-Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:6-TSOP; Leaded Process Compatible:No |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST93C47AB6013TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AB6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AM1013TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AM1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AM3013TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
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