参数资料
型号: ST95P08B3TR
厂商: 意法半导体
英文描述: MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.05R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:3.0A; Current, Idm pulse:12A; Marking, SMD:M5; Pins, No. RoHS Compliant: Yes
中文描述: 8千位的SPI EEPROM,带有正时钟选通
文件页数: 15/16页
文件大小: 119K
代理商: ST95P08B3TR
Read Status Register (RDSR)
The RDSR instruction provides access to the status
register. The status register may be read at any
time, even during a non-volatile write. As soon as
the 8th bit of the status register is read out, the
ST95P08 enters a wait mode (data on D are not
decoded, Q is in Hi-Z) until it is deselected.
The status register format is as follows:
b7
b0
1
BP1
BP0
WEL
WIP
BP1, BP0: Read and write bits
WEL, WIP: Read only bits.
During a non-volatile write to the memory array, all
bits BP1, BP0, WEL, WIP are valid and can be read.
During a non volatile write to the status register, the
only bits WEL and WIP are valid and can be read.
The values of BP1 and BP0 read at that time
correspond to the previous contents of the status
register.
The Write-In-Process (WIP) read only bit indicates
whether the ST95P08 is busy with a write opera-
tion. When set to a ’1’ a write is in progress, when
set to a ’0’ no write is in progress.
The Write Enable Latch (WEL) read only bit indi-
cates the status of the write enable latch. When set
to a ’1’ the latch is set, when set to a ’0’ the latch is
reset.
The Block Protect (BP0 and BP1) bits indicate the
extent of the protection employed. These bits are
set by the user issuing the WRSR instruction.
These bits are non-volatile.
Write Status Register (WRSR)
The WRSR instruction allows the user to select the
size of protected memory. The ST95P08 is divided
into four 2048 bit blocks. The user may read the
blocks but will be unable to write within the selected
blocks.
The blocks and respective WRSR control bits are
shown in Table 6.
When the WRSR instruction and the 8 bits of the
Status Register are latched-in, the internal write
cycle is then triggered by the rising edge of S. This
rising edge of S must appear after the 8th bit of the
Status Register content (it must not appear a 17th
clock pulse before the rising edge of S), otherwise
the internal write sequence is not performed.
Read Operation
The chip is first selected by putting S low. The serial
one byte read instruction is followed by a one byte
address (A7-A0), each bit being latched-in during
the rising edge of the clock (C). Bit 3 and 4 of the
read instruction contain address bits A9 and A8
(most significant address bits). These bits are used
to select the first or second page of the device.
Then, the data stored in the memory at the selected
address is shifted out on the Q output pin; each bit
being shifted out during the falling edge of the clock
(C). The data stored in the memory at the next
address can be read in sequence by continuing to
provide clock pulses. The byte address is automat-
Status Register Bits
Array Addresses
Protected
BP1
BP0
0
none
0
1
300h - 3FFh
1
0
200h - 3FFh
1
000h - 3FFh
Table 7. Array Addresses Protect
Instruction
Description
Instruction Format
WREN
Set Write Enable Latch
000X X110
WRDI
Reset Write Enable Latch
000X X100
RDSR
Read Status Register
000X X101
WRSR
Write Status Register
000X X001
READ
Read Data from Memory Array
000A A011
WRITE
Write Data to Memory Array
000A A010
Notes: A = 1, Upper page selected
A = 0, Lower page selected
X = Don’t care
Table 8. Instruction Set
8/16
ST95P08
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