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参数资料
| 型号： | STB11NM60-1 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
| 中文描述： | N沟道600V的- 0.4ohm - 11A条TO-220/TO-220FP/D2PAK/I2PAK的MDmesh⑩功率MOSFET |
| 文件页数： | 2/12页 |
| 文件大小： | 195K |
| 代理商： | STB11NM60-1 |
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
2/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
TO-220/D
2
PAK/I
2
PAK
0.78
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
3.57
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
T
l
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
5.5
Unit
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
350
mJ
Test Conditions
I
D
= 250
μ
A, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
V
GS
=
±
30V
1
μ
A
μ
A
nA
10
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 5.5A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
0.4
0.45
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 5.5A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5.2
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
1000
pF
Output Capacitance
230
pF
Reverse Transfer
Capacitance
25
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V,V
DS
= 0V to 480V
100
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6
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相关代理商/技术参数 |
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|---|---|
| STB11NM60A-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET |
| STB11NM60FD | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) |
| STB11NM60FD-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET |
| STB11NM60FDT4 | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB11NM60N | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET |
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