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参数资料
| 型号： | STB13NK60Z-1 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N沟道600V的0.48ohm - 13A条TO-220/FP/D2PAK/I2PAK/TO-247齐纳保护SuperMESH⑩功率MOSFET |
| 文件页数： | 1/11页 |
| 文件大小： | 410K |
| 代理商： | STB13NK60Z-1 |
1/11
September 2003
STB130NH02L
N-CHANNEL 24V - 0.0034
- 120A D
2PAK
STripFET III POWER MOSFET FOR DC-DC CONVERSION
I
TYPICAL R
DS
(on) = 0.0034
@ 10 V
I
TYPICAL R
DS
(on) = 0.005
@ 5 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB130NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET technology. It is
ideal in high performance DC-DC converter applications
where efficiency is to be achieved at very high output
currents.
APPLICATIONS
I
SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER
I
OR-ING DIODE
Ordering Information
SALES TYPE
STB130NH02LT4
TYPE
V
DSS
R
DS(on)
I
D
STB130NH02L
24 V
< 0.0044
90 A
(2)
MARKING
B130NH02L
PACKAGE
TO-263
PACKAGING
TAPE & REEL
1
3
D
2
PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D(2)
Drain Current (continuous) at T
C
= 25°C
I
D(2)
Drain Current (continuous) at T
C
= 100°C
I
DM(3)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS (4)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Parameter
Value
30
24
24
± 20
90
90
360
150
1
900
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STB13NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB13NM50N | 功能描述:MOSFET N Ch 600V 6A Hyper fast IGBT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB13NM50N_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 500 V - 0.250 Ω - 12 A MDmesh? II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK |
| STB13NM50N-1 | 功能描述:MOSFET N Ch 600V 6A Hyper fast IGBT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB13NM60N | 功能描述:MOSFET POWER MOSFET N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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