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| 型号： | STB13NK60Z-1 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N沟道600V的0.48ohm - 13A条TO-220/FP/D2PAK/I2PAK/TO-247齐纳保护SuperMESH⑩功率MOSFET |
| 文件页数： | 11/11页 |
| 文件大小： | 410K |
| 代理商： | STB13NK60Z-1 |
11/11
STB130NH02L
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相关PDF资料 |
PDF描述 |
|---|---|
| STB13NK60 | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB13NK60Z | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB13NK60ZT4 | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB14NF10T4 | FUSEHOLDER 16POLE ALRM-IND PNLMT |
| STB14NK60Z-1 | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB13NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB13NM50N | 功能描述:MOSFET N Ch 600V 6A Hyper fast IGBT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB13NM50N_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 500 V - 0.250 Ω - 12 A MDmesh? II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK |
| STB13NM50N-1 | 功能描述:MOSFET N Ch 600V 6A Hyper fast IGBT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB13NM60N | 功能描述:MOSFET POWER MOSFET N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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