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参数资料
| 型号： | STB130NH02LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 90A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 90A型（丁）|对263AB |
| 文件页数： | 2/11页 |
| 文件大小： | 410K |
| 代理商： | STB130NH02LT4 |
STB130NH02L
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(5
)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.0
62.5
300
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 25 mA, V
GS
= 0
24
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 20 V
V
DS
= 20 V
T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 μA
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 5 V
I
D
= 45 A
I
D
= 22.5 A
0.0034
0.005
0.0044
0.008
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (5)
Forward Transconductance
V
DS
= 10 V
I
D
= 45 A
55
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V f = 1 MHz V
GS
= 0
4450
1126
141
pF
pF
pF
R
G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1.6
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