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参数资料
| 型号： | STB14NF10 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| 中文描述： | N沟道100V的- 0.115欧姆-第15A TO-220/TO-220FP/D2PAK低栅极电荷STripFET⑩二功率MOSFET |
| 文件页数： | 3/11页 |
| 文件大小： | 176K |
| 代理商： | STB14NF10 |
3/11
STB14NF10 STP14NF10 STP14NF10FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s,duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 7 A
V
GS
= 10 V
16
25
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80 V I
D
= 12 A V
GS
= 10V
15.5
3.7
4.7
21
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 7 A
V
GS
= 10 V
32
8
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM(
)
Source-drain Current
Source-drain Current (pulsed)
15
60
A
A
V
SD(*)
Forward On Voltage
I
SD
= 14 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 14 A
V
DD
= 50 V
(see test circuit, Figure 5)
di/dt = 100A/
μ
s
T
j
= 150
°
C
90
230
5
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220
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相关代理商/技术参数 |
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| STB14NF10_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 100V - 0.115ヘ - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET⑩ II Power MOSFET |
| STB14NF10T4 | 功能描述:MOSFET N-Ch 100 Volt 15 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB14NK50Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB14NK50Z-1 | 功能描述:MOSFET N-Ch, 500V-0.34ohms 14A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB14NK50ZT4 | 功能描述:MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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