- 您现在的位置：买卖IC网 > PDF目录372324 > STB14NK60Z-1 (意法半导体) 30V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | STB14NK60Z-1 |
| 厂商： | 意法半导体 |
| 元件分类： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 11/11页 |
| 文件大小： | 176K |
| 代理商： | STB14NK60Z-1 |
11/11
STB14NF10 STP14NF10 STP14NF10FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of useof such information nor forany infringement ofpatents or other rights of third parties which may result from itsuse. No license isgranted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express writtenapproval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
相关PDF资料 |
PDF描述 |
|---|---|
| STB14NK60 | 30V N-Channel PowerTrench MOSFET |
| STB14NF10 | N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| STB14NK60Z | 30V N-Channel PowerTrench MOSFET |
| STB14NK60ZT4 | 30V N-Channel PowerTrench MOSFET |
| STB160NF03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 160A I(D) | TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB14NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 13.5 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB14NM50N | 功能描述:MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB14NM65N | 功能描述:MOSFET N-Channel 650V 0.33 Ohms 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB15-0-0 | 制造商:TE Connectivity 功能描述:CABLE MARKER E SIZE15 0 PK50 制造商:TE Connectivity 功能描述:CABLE MARKER, E, SIZE15, 0, PK50 制造商:TE Connectivity 功能描述:CABLE MARKER, E, SIZE15, 0, PK50, Cable Diameter Min:5.8mm, Cable Diameter Max:8.5mm, Legend:0, Legend Colour:White, Marker Colour:Black, Marker Material:PVC (Polyvinyl Chloride), Operating Temperature Max:125C , RoHS Compliant: Yes |
| STB150N3LH6 | 功能描述:MOSFET N-Ch 30V 2.4mOhm 80A STripFET VI DeepGATE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。