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参数资料
| 型号： | STB16NB25 |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET |
| 中文描述： | ? -频道250V - 0.220ohm - 16A条-对263 PowerMESH] MOSFET的 |
| 文件页数： | 3/9页 |
| 文件大小： | 153K |
| 代理商： | STB16NB25 |
3/9
STB160NF03L
Safe OperatingArea
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 15V, I
D
= 80A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
Turn-on Delay Time
28
ns
t
r
Rise Time
285
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V, I
D
= 160A,
V
GS
= 10V
123
21
40
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15V, I
D
= 80A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Vclamp =24V,I
D
=40A
R
G
= 4.7
,
V
GS
= 10V
Min.
Typ.
110
65
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
110
35
70
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
160
A
Source-drain Current (pulsed)
640
A
Forward On Voltage
I
SD
= 160A, V
GS
= 0
I
SD
= 80A, di/dt = 100A/
μ
s,
V
DD
= 15V, T
j
= 25
°
C
(see test circuit, Figure 5)
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
80
180
4.5
ns
nC
A
Thermal Impedance
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