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参数资料
| 型号： | STB16NB25T4 |
| 厂商： | 意法半导体 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 7A条（丁）|对263AB |
| 文件页数： | 9/9页 |
| 文件大小： | 153K |
| 代理商： | STB16NB25T4 |
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STB160NF03L
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相关代理商/技术参数 |
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|---|---|
| STB16NF06L | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET⑩ POWER MOSFET |
| STB16NF06L_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 60V - 0.07Ω - 16A - D2PAK STripFET? Power MOSFET |
| STB16NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB16NF25 | 功能描述:MOSFET N-Ch 60 Volt 25 Amp Power Mosfet D2PAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB16NK60Z-S | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH⑩ MOSFET |
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