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参数资料
| 型号： | STB20NM60 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| 中文描述： | N沟道600V的- 0.25ohm - 20A条TO-220/FP/D2PAK/I2PAK的MDmesh？功率MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 84K |
| 代理商： | STB20NM60 |
1/8
December 2000
STB20NE06L
N-CHANNEL 60V - 0.06
- 20A D
2
PAK
STripFET
POWER MOSFET
I
TYPICAL RDS(on) = 0.06
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100 oC
I
LOW THRESHOLD DRIVE
I
ADD SUFFIX“T4” FORORDERINGINTAPE&
REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique “Single Feature Size
”
strip-based
process.
The
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
resulting
transistor
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STB20NE06L
60 V
<0.07
20 A
D
2
PAK
TO-263
(suffix“T4”)
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)Pulse width limited by safe operating area.
(1)
I
SD
≤
20A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Parameter
Value
60
60
±
20
20
14
80
70
0.47
Unit
V
V
V
A
A
A
W
W/
°
C
V/ns
°
C
°
C
7
–60 to 175
175
INTERNAL SCHEMATIC DIAGRAM
相关PDF资料 |
PDF描述 |
|---|---|
| STB20NM60-1 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM60T4 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM50T4 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM50 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM50-1 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB20NM60-1 | 功能描述:MOSFET N-Ch 600 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB20NM60A-1 | 制造商:STMicroelectronics 功能描述:STB20NM60A-1 - Rail/Tube |
| STB20NM60D | 功能描述:MOSFET N Ch 600V 0.26 Ohm 20A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB20NM60T4 | 功能描述:MOSFET N-Ch 600 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB20NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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