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参数资料
| 型号： | STB20NM60 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| 中文描述： | N沟道600V的- 0.25ohm - 20A条TO-220/FP/D2PAK/I2PAK的MDmesh？功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 84K |
| 代理商： | STB20NM60 |
STB20NE06L
2/8
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
j
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
case
= 25
°
C unless otherwise specified)
OFF
ON
(*
)
DYNAMIC
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.14
62.5
0.5
300
°
C/W
°
C/W
°
C/W
°
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
20
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 35 V)
100
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
=Max Rating T
C
= 125
°
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
±
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250
μ
A
1
V
I
DS(on)
Static Drain-source On Resis-
tance
V
GS
= 5 V
V
GS
= 10 V
I
D
= 10 A
I
D
= 10 A
0.07
0.06
0.085
0.07
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
20
A
Symbol
g
fs(*)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward Transconductance
V
DS
>I
D(on)
x R
DS(on)max
I
D
=10A
5
9
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitances
V
DS
= 25V f = 1 MHz V
GS
= 0
800
125
40
pF
pF
pF
相关PDF资料 |
PDF描述 |
|---|---|
| STB20NM60-1 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM60T4 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STB20NM50T4 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
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