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参数资料
| 型号： | STB70NF3 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| 中文描述： | N沟道30V的- 0.008欧姆-第70A D2PAK封装，低栅极电荷STripFET功率MOSFET |
| 文件页数： | 1/9页 |
| 文件大小： | 155K |
| 代理商： | STB70NF3 |
1/9
April 2001
STB70NFS03L
N-CHANNEL 30V - 0.008
- 70A D2PAK
STripFET
MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTION
This product associates a Power MOSFET of the
third genarationof STMicroelectronics unique “ Sin-
gle Feature Size” strip-based process and a low
drop Schottky diode. The transistor shows the best
trade-off between on-resistance and gate charge.
Used as low side in buck regulators, the product is
the solutionin terms of conductionlosses and space
saving.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
(
G
) Pulse width limited by safe operating area
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Repetitive Peak Reverse Voltage
I
F(RMS)
RMS Forward Current
I
F(AV)
Average Forward Current
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
R
DS(on)
I
D
30 V
< 0.01
70 A
SCHOTTKY
I
F(AV)
V
RRM
V
F(MAX)
3 A
30 V
0.51 V
Parameter
Value
Unit
30
V
30
V
±
20
V
70
A
50
A
280
A
100
W
0.67
W/
°
C
°
C
°
C
T
stg
T
j
Storage Temperature
–65 to 175
Max. Operating Junction Temperature
175
Parameter
Value
Unit
20
V
20
A
TL = 125
°
C
δ
= 0.5
tp = 10 ms
Sinusoidal
3
A
I
FSM
Surge Non Repetitive Forward Current
75
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/
μ
s
D2PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STB70NF3LL | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| STB70NF3LL_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET |
| STB70NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 70 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB70NFS03L | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
| STB70NFS03L_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier |
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