参数资料
型号: STB70NF3
厂商: 意法半导体
英文描述: N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
中文描述: N沟道30V的- 0.008欧姆-第70A D2PAK封装,低栅极电荷STripFET功率MOSFET
文件页数: 3/9页
文件大小: 155K
代理商: STB70NF3
3/9
STB70NFS03L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 15V, I
D
= 35A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
20
Max.
Unit
ns
t
r
Rise Time
350
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V, I
D
= 46A,
V
GS
= 10V
35
5
10
45
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15V, I
D
= 35A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
35
65
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
70
Unit
A
Source-drain Current
Source-drain Current (pulsed)
280
A
Forward On Voltage
I
SD
= 70A, V
GS
= 0
I
SD
= 70A, di/dt = 100A/
μ
s,
V
DD
= 20V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
75
110
2.9
ns
nC
A
Safe Operating Area
Thermal Impedence
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