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参数资料
| 型号： | STB7NA40T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 6.5AI（四）|对263AB |
| 文件页数： | 3/10页 |
| 文件大小： | 125K |
| 代理商： | STB7NA40T4 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 200 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 320 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 320 V
I
D
= 3.5 A
V
GS
= 10 V
25
75
35
100
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 7 A
V
GS
= 10 V
220
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 7 A
V
GS
= 10 V
34
7
15
45
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 320 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 7 A
V
GS
= 10 V
40
25
75
55
35
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
6.5
26
A
A
V
SD
(
)
I
SD
= 6.5 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 7 A
V
DD
= 100 V
(see test circuit, figure 5)
380
4.8
25
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimitedby safe operating area
Safe Operating Area
ThermalImpedance
STB7NA40
3/10
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