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参数资料
| 型号： | STB80NF55L06 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 80A条（丁）|对263AB |
| 文件页数： | 1/9页 |
| 文件大小： | 339K |
| 代理商： | STB80NF55L06 |
1/9
PRELIMINARY DATA
September 2003
STP80NF55L-08
STB80NF55L-08 - STB80NF55L-08-1
N-CHANNEL 55V - 0.0065
- 80A - TO-220/D
2
PAK/I
2
PAK
STripFET II POWER MOSFET
(1) Current Limited by Package
(2) I
SD
≤
80A, di/dt
≤
500A/μs, V
DD
= 40V T
j
≤
T
JMAX.
(3) Starting T
j
= 25°C, I
D
= 40A, V
DD
= 40V
I
TYPICAL R
DS
(on) = 0.0065
I
LOW THRESHOLD DRIVE
I
LOGIC LEVEL DEVICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
“Single
Feature
APPLICATIONS
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(1)
Drain Current (continuous) at T
C
= 25°C
I
D
(1)
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (2)
Peak Diode Recovery voltage slope
E
AS
(3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP80NF55L-08
STB80NF55L-08
STB80NF55L-08-1
55 V
55 V
55 V
0.008
0.008
0.008
80 A
80 A
80 A
Parameter
Value
Unit
55
V
55
V
± 16
V
80
A
80
A
320
A
300
W
2
15
W/°C
V/ns
870
mJ
–55 to 175
°C
175
°C
TO-220
1
2
3
1
3
D
2
PAK
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相关PDF资料 |
PDF描述 |
|---|---|
| STB80NF55L06T4 | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB |
| STB80NE03L06T4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 80A I(D) | TO-263AA |
| STB80NF10-T4 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-263AB |
| STB80NF10 | N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| STB80NF12 | N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/DPAK STripFET⑩ II POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB80NF55L-06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET |
| STB80NF55L06T4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB |
| STB80NF55L-06T4 | 功能描述:MOSFET N-Ch, 55V-0.005ohms 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB80NF55L-08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET⑩ II POWER MOSFET |
| STB80NF55L-08-1 | 功能描述:MOSFET N-Ch, 55V-0.0065ohms 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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