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参数资料
| 型号： | STB80PF55 |
| 厂商： | 意法半导体 |
| 英文描述： | P-CHANNEL 55V - 0.016 ohm - 80A D2PAK STripFET⑩ II POWER MOSFET |
| 中文描述： | P通道55V的- 0.016欧姆- 80A条采用D2PAK STripFET⑩二功率MOSFET |
| 文件页数： | 3/9页 |
| 文件大小： | 339K |
| 代理商： | STB80PF55 |
3/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 27V, I
D
= 40A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
V
DD
= 27.5 V, I
D
= 80A,
V
GS
= 4.5V
Min.
Typ.
Max.
Unit
35
ns
t
r
Rise Time
145
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
75
20
30
100
nC
nC
nC
Parameter
Test Conditions
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
85
65
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
80
A
Source-drain Current (pulsed)
320
A
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, di/dt = 100A/μs,
V
DD
= 20V, T
j
= 150°C
(see test circuit, Figure 5)
85
280
6.5
ns
nC
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STB80PF55_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:P-channel 55V - 0.016ヘ - 80A - TO-220 - D2PAK STripFET⑩ II Power MOSFET |
| STB80PF55_10 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET |
| STB80PF55-1 | 制造商:STMicroelectronics 功能描述: |
| STB80PF55T4 | 功能描述:MOSFET P-Ch 55 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB81S..25 | 制造商:STABILA 功能描述:STABILA LEVEL 81 10" C/W HOLSTER |
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