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参数资料
| 型号： | STB85NF3LLT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 85A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 85A条（丁）|对263AB |
| 文件页数： | 3/9页 |
| 文件大小： | 154K |
| 代理商： | STB85NF3LLT4 |
3/9
STB85NF3LL
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 15V, I
D
= 30A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
22
Max.
Unit
ns
t
r
Rise Time
130
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V, I
D
= 60A,
V
GS
= 4.5V
30
9
12.5
40
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15V, I
D
= 30A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
36.5
36.5
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V,I
D
=30A
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 5)
32
23
40
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
85
A
I
SDM
(2)
Source-drain Current (pulsed)
340
A
V
SD
(1)
Forward On Voltage
I
SD
= 85A, V
GS
= 0
I
SD
= 85A, di/dt = 100A/
μ
s,
V
DD
= 15V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
65
105
3.4
ns
nC
A
Thermal Impedence
Safe Operating Area
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