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参数资料
| 型号： | STBR608 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 桥式整流 |
| 英文描述： | 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | GBU, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 46K |
| 代理商： | STBR608 |
STBR606/608
2/5
Symbol
Parameter
Min.
Typ.
Max.
Unit
Rth(j-c)
Junction to case
7.4
8
°C/W
Rth(j-a)
Junction to ambient
35
°C/W
THERMAL PARAMETERS
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward voltage drop
IF =6A
1.05
V
IR
Reverse leakage current per
leg
VR =VRRM
Tj = 25°C
5
A
Tj = 125°C
50
A
C
Junction capacitance per leg
(note 1)
55
pF
Note 1: Measured at 1MHz and applied reverse voltage of 4V.
ELECTRICAL CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
10
11
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
IF(av)(A)
IP / IF(av)=20
IP / IF(av)=10
IP / IF(av)=5
(capacitive load)
IP / IF(av)=P
(resistive load)
PF(av)(W)
Fig. 1: Average power dissipation of bridge versus
average output current.
0
1
2
3
4
5
6
7
0
25
50
75
100
125
150
Tamb(°C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Rth(j-a)=35°C/W
IF(av)(A)
Fig. 2: Average output current versus ambient
temperature (resistive load or inductive load)
0.1
1.0
10.0
100.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
Free air
Zth(j-a)(°C/W)
Fig. 3: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board epoxy FR4)
0.1
1.0
10.0
100.0
1000.0
0.0
0.5
1.0
1.5
2.0
2.5
VFM(V)
Tj=25°C
Tj=125°C
IFM(A)
Fig. 4: Forward voltage drop versus forward
current (typical values, per leg).
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