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参数资料
| 型号： | STBR608 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 桥式整流 |
| 英文描述： | 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | GBU, 4 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 46K |
| 代理商： | STBR608 |
STBR606/608
3/4
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0
100
200
300
400
500
600
700
800
VR(V)
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
IR(A)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per leg).
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0
25
50
75
100
125
150
Tj(°C)
VR=800V
IR(A)
Fig. 6: Relative leakage current versus junction
temperature (typical values).
1
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
RMS
Tj=25°C
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
dIF/dt(A/s)
IF=6A
VR=400V
Tj=125°C
IF
dIF/dt
S=[dIF/dt]/[dIR/dt]
t
S(Softness factor)
Fig. 8: Softness factor versus dIF/dt (typical
values).
0
20
40
60
80
100
120
140
160
180
1
10
100
1000
Number of cycles
Non repetitive
Tj initial=150°C
Repetitive
Tj initial=50°C
tp=10ms
IFSM(A)
Fig. 9: Surge peak forward current versus number
of cycles (per leg).
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